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NTMFS4897NF
Power MOSFET
30 V, 171 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Includes Schottky Diode
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Device
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
2.0 m W @ 10 V
3.0 m W @ 4.5 V
N ? CHANNEL MOSFET
D
I D MAX
171 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA v
10 sec
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
I D
29
21
2.74
47
34
A
W
A
S
MARKING
DIAGRAM
D
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
P D
I D
7.3
17
12
W
A
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4897NF
AYWZZ
D
D
D
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
P D
I D
P D
0.95
171
123
96.2
W
A
W
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Pulsed Drain
Current
t p =10 m s
T A = 25 ° C
I DM
288
A
ORDERING INFORMATION
Current limited by package
T A = 25 ° C
I Dmaxpkg
100
A
Device
Package
Shipping ?
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 50 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T J ,
T STG
I S
dV/dt
EAS
T L
? 55 to
+150
120
6
375
260
° C
A
V/ns
mJ
° C
NTMFS4897NFT1G SO ? 8FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4897NFT3G SO ? 8FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 2
1
Publication Order Number:
NTMFS4897NF/D
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